Work

Crack-free > 1- μ m AlN layer on Si substrate using ductile interlayer for strain modification in epitaxial film

Year: 2024

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0219833

Authors: Muhammad Aqib, Mina Moradnia, Mihee Ji, Vijay S. Parameshwaran, Wendy L. Sarney, Sara Pouladi, Nam-In Kim, Rheno Paul Rajesh Kumar, Gregory A. Garrett, Anand V. Sampath, Rebecca L. Forrest, Jae-Hyun Ryou

Institutions: University of Houston, DEVCOM Army Research Laboratory, United States Army Combat Capabilities Development Command

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4402443649

FWCI: 0.595

Cites: 29

Cited by: 4

Related to: 10