High-Efficiency Doping Outcomes in Homoepitaxial β-Ga2O3 Films via Pulsed Si Doping with MOCVD
Year: 2024
Type: article
Source: Crystal Growth & Design
Institution: Xidian University
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
Award: G4259696608
OpenAlex ID: W4402506691