Characterization and Analysis of Degradation for 1.2-kV Rated SiC Trench MOSFETs Under Repetitive Switching Impulses
Year: 2024
Type: article
Authors: Hengyu Yu, Michael Jin, Nikhil Bhardwaj, Limeng Shi, Monikuntala Bhattacharya, Jiashu Qian, Shiva Houshmand, Anant K. Agarwal
Institution: The Ohio State University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4402510232