Work

Area-Selective Atomic Layer Deposition of Ruthenium via Reduction of Interfacial Oxidation

Year: 2024

Type: article

Source: Chemistry of Materials

DOI: 10.1021/acs.chemmater.4c01133

Authors: Eun-Hyoung Cho, Dabin Kong, Iaan Cho, Youngchul Leem, Young Min Lee, Miso Kim, Chi Thang Nguyen, Jeong Yub Lee, Bonggeun Shong, Han-Bo-Ram Lee

Institutions: Samsung (South Korea), Incheon National University, Hongik University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Ministry of Trade, Industry and Energy

Awards: G3664755919, G6117619707

OpenAlex ID: W4402510643

FWCI: 0.825

Cites: 63

Cited by: 8

Related to: 10