Self‐Rectifying Short‐Term Memory Phenomena Through Integration of TiOx Oxygen Reservoir and Al 2 O 3 Barrier Layers for Neuromorphic System
Year: 2024
Type: article
Source: Advanced Materials Technologies
Authors: Hyeonseung Ji, Sungjoon Kim, Sungjun Kim
Institutions: Dongguk University, Korea University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Awards: G1280432966, G3487047936
OpenAlex ID: W4402517547