Work

Process stability of SiO2 atomic layer etching in C4F6/Ar chemistry

Year: 2024

Type: article

Source: Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

DOI: 10.1116/6.0003822

Authors: Antoine Ronco, F. Boulard, B. Pelissier, N. Posseme

Institutions: Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble, Université Grenoble Alpes, Centre National de la Recherche Scientifique, STMicroelectronics (France)

Language: English

Topic: Plasma Diagnostics and Applications

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4402519043

FWCI: 0.625

Cites: 20

Cited by: 6

Related to: 10