A 0.01–50 GHz power detector with temperature compensation and wideband DC‐blocking capacitor
Year: 2024
Type: article
Abstract: This letter presents a 0.01–50‐GHz resistive matching power detector implemented in a commercial 0.15‐ GaAs pseudomorphic high electron mobility transistor technology. An analytical expression is derived for the voltage responsivity of the detector as a function of temperature. To compensate for the temperature dependence of the detector, bias diode topology and mesa resistor load are employed. For an input power of −20 dBm at 1 GHz, the maximum variation of the detector output voltage is less than 0.5 dB over the temperature from C to C. The detector's S11 is less than −8 dB, the dynamic range (DR) is 55 dB, and the maximum voltage responsivity is 700 V/W. An on‐chip wideband capacitor with a bent‐strip shape is designed for direct current blocking. The detector can be used for wideband power monitoring and power amplifier control loop for its high DR and temperature stability.
DOI: 10.1002/mop.34315
Authors: Yongmu Yang, Peng Hao, Yang Yu, Xin Xu, Cheng Peng, Fei You
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W4402520681