Work

Emerging GaN Technologies for Next-Generation Millimeter-Wave Applications

Year: 2024
Type: article
Abstract: Advanced millimeter-wave (mm-wave) transceiver systems, including future mm-wave 5G and 6G mobile networks, are of great interest to support high-data-rate communications (e.g., 10 Gb/s or higher) and backhaul communications with >50 Gb/s. Since the E band and beyond can also support multigigahertz bandwidths, there is also growing interest in phased-array implementations. With its inherent integration advantage, SiGe phased arrays were demonstrated at the W band[1], with the latest result of a >10-Gb/s data rate[2]. In the case of point-to-point wireless links, III–V technologies [e.g., a pseudomorphic high-electron mobility transistor (pHEMT)] have also been utilized in full-duplex W-band links with a peak data rate of 10 Gb/s[2].
Language: English
Open Access status: green
OpenAlex ID: W4402569397
FWCI: 4.76
Cites: 49
Cited by: 33
Related to: 10