Work

Field-Effect Transistor Based on MoSi₂N₄ Monolayer for Digital Logic Applications

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3454214

Authors: Hamidreza Ghanbari Khorram, Samad Sheikhaei, Shoeib Babaee Touski, Alireza Kokabi

Institutions: University of Tehran, Hamedan University of Technology

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4402570782

FWCI: 0.947

Cites: 46

Cited by: 10

Related to: 10