Work

Design and TCAD Study of p-GaN Gate HEMT With a Nanowire Structure for Stable VTH and Self-Clamped Gate Leakage

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3454027

Authors: Zhongchen Ji, Qimeng Jiang, Xinyue Dai, Sen Huang, Xinhua Wang, Xinyu Liu

Institutions: Institute of Microelectronics, University of Chinese Academy of Sciences

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G2313654935, G3927197278, G442552545, G7566132602, G7631395229, G7926517203

OpenAlex ID: W4402570852

FWCI: 0.433

Cites: 31

Cited by: 3

Related to: 10