Top-Illuminated Annular Ge-on-Si APD in 45-nm Lateral SOI Process With High Gain–Bandwidth Product at 4 V Reverse Bias
Year: 2024
Type: article
Authors: Md Nabil Shehtab Dhrubo, John W. Rollinson, Robert F. Karlicek, Mona M. Hella
Institution: Rensselaer Polytechnic Institute
Language: English
Topic: Photonic and Optical Devices
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Awards: G1153533095, G4409847277
OpenAlex ID: W4402570939