Work

A New Semi-Analytical Model for Erase Transients of 3-D Gate-All-Around (GAA) NAND Flash Memories

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3454284

Authors: Jinil Yoo, Haechan Choi, Hyungcheol Shin

Institution: Seoul National University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4402570958

FWCI: 0.625

Cites: 22

Cited by: 6

Related to: 10