Work

Performance Improvement of Enhanced-Mode β-Ga 2 O 3 MOSFETs by Partial Gate Recess Structure

Year: 2024

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.4c00835

Authors: Yueh-Han Chuang, Fu-Gow Tarntair, Pei-Jung Wang, Tian-Li Wu, Niall Tumilty, Ray-Hua Horng

Institution: National Yang Ming Chiao Tung University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Ministry of Education, Industrial Technology Research Institute, National Science and Technology Council

Awards: G1182025171, G1464467111, G1750931688, G3986353782, G6333480307, G91258220

OpenAlex ID: W4402574027

FWCI: 1.09

Cites: 22

Cited by: 14

Related to: 10