300-nm-thick, ultralow-loss silicon nitride photonic integrated circuits by 8-in. foundry production
Year: 2024
Type: article
Source: Applied Physics Letters
DOI: 10.1063/5.0221409
Institution: Peking University
Language: English
Topic: Photonic and Optical Devices
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4402574291
