Year: 2024
Type: article
Abstract: Aim. The degradation of CMOS microcircuits exposed to ionizing radiation was analysed. Three MOS defect formation processes at the Si-SiO2 boundary were examined. Methods. Using the example of test logic elements, the dependence of the time of conditional speed failure on the gamma dose rate was analysed. Findings. A critical defect at the Si-SiO2 boundary was identified. Conclusions. The approach proposed in the paper allows identifying the causes of CMOS microcircuit failures. Calculated failure times for three dose rates are presented.
Source: Dependability
Authors: A. V. Kuzminova, V. D. Popov
Institution: National Research Nuclear University MEPhI
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W4402574956