Work

Sub-Boltzmann Switching, Hysteresis-Free Charge Modulated Negative Differential Resistance FinFET

Year: 2024

Type: article

Source: ACS Nano

DOI: 10.1021/acsnano.4c08977

Authors: Juho Sung, Sanghyun Kang, Donghwan Han, Gwon Kim, Jaehyuk Lim, Myoungsu Son, Changhwan Shin

Institutions: Sungkyunkwan University, Korea University, Samsung (South Korea), Samsung Electronics (South Korea)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Ministry of Science, ICT and Future Planning, Ministry of Science and ICT, South Korea

Awards: G303752975, G8975431054

OpenAlex ID: W4402580187

FWCI: 0.41

Cites: 74

Cited by: 4

Related to: 10