Work

Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers

Year: 2024

Type: article

Abstract: We have investigated the origins of photoluminescence from quantum dot (QD) layers prepared by alternating depositions of sub-monolayers and a few monolayers of size-mismatched species, termed as sub-monolayer (SML) epitaxy, in comparison with their Stranski–Krastanov (SK) QD counterparts. Using measured nanostructure sizes and local In-compositions from local-electrode atom probe tomography as input into self-consistent Schrödinger–Poisson simulations, we compute the 3D confinement energies, probability densities, and photoluminescence (PL) spectra for both InAs/GaAs SML- and SK-QD layers. A comparison of the computed and measured PL spectra suggests one-dimensional electron confinement, with significant 3D hole localization in the SML-QD layers that contribute to their enhanced PL efficiency in comparison to their SK-QD counterparts.

Source: Applied Physics Letters

DOI: 10.1063/5.0219815