Work

Improving Single-Event Effect Performance of SiC MOSFET by Excess Hole Extraction

Year: 2024

Type: article

Source: IEEE Transactions on Device and Materials Reliability

DOI: 10.1109/tdmr.2024.3463698

Authors: Shiwei Liang, Yu Yang, Jiaqi Chen, Lei Shu, Liang Wang, Jun Wang

Institutions: Hunan University, Beijing Microelectronics Technology Institute

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Hunan Province, Fundamental Research Funds for the Central Universities

Awards: G2124934158, G5133721908, G7866184595, G8336905228

OpenAlex ID: W4402626734

FWCI: 0.93

Cites: 22

Cited by: 9

Related to: 10