Work

Characterization of AlGaN/GaN HEMTs with Different Manufacturing Characteristics

Year: 2024

Type: conference-paper

Source: Symposium on Microelectronics Technology and Devices

DOI: 10.1109/sbmicro64348.2024.10673850

Authors: E. C. Panzo, J. Candido, N. Graziano Júnior, E. Simoen, M. G. C. Andrade

Institutions: Universidade Estadual Paulista (Unesp), Ghent University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4402628497

FWCI: 2.379

Cites: 8

Cited by: 2

Related to: 10