Work

Effect of interface traps on the different conduction mechanisms of MISHEMT from 200 K to 450 K

Year: 2024

Type: conference-paper

Source: Symposium on Microelectronics Technology and Devices

DOI: 10.1109/sbmicro64348.2024.10673872

Authors: Welder F. Perina, Joao A. Martino, Paula G. D. Agopian

Institution: Universidade de São Paulo

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Coordenação de Aperfeiçoamento de Pessoal de Nível Superior

OpenAlex ID: W4402629026

FWCI:

Cites: 23

Cited by:

Related to: 10