Work

Neutron-induced effects on a commercial GaN High Electron Mobility Transistor

Year: 2024

Type: conference-paper

Source: Symposium on Microelectronics Technology and Devices

DOI: 10.1109/sbmicro64348.2024.10673863

Authors: Alexis Cristiano Vilas Bôas, Saulo Gabriel Alberton, Paulo Roberto Garcia, Nilberto H. Medina, Vitor Ângelo P. Aguiar, Marco Antônio A. Melo, Roberto Baginski B. Santos, Renato C. Giacomini, Tássio V. Cavalcante, Luis Eduardo Seixas, Saulo Finco, Francisco Rogelio Palomo Pinto, Marcilei Guazzelli

Institutions: Centro Universitário FEI, Universidade de São Paulo, Centro de Tecnologia da Informação Renato Archer, Universidad de Sevilla

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4402629428

FWCI: 1.56

Cites: 13

Cited by: 2

Related to: 10