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SF6/O2 plasma for ICP/RIE SiC Etching
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Year:
2024
Type:
conference-paper
Source:
Symposium on Microelectronics Technology and Devices
DOI:
10.1109/sbmicro64348.2024.10673868
Authors:
R. R. César,
M. Mederos,
F. H. Cioldin,
R. M. Beraldo,
R. C. Teixeira,
R. A. Minamisawa,
J. A. Diniz
show all 7
Institutions:
Centro de Tecnologia da Informação Renato Archer,
FHNW University of Applied Sciences and Arts Northwestern Switzerland,
Universidade Estadual de Campinas (UNICAMP)
Language:
English
Topic:
Silicon Carbide Semiconductor Technologies
Subfield:
Electrical and Electronic Engineering
Field:
Engineering
Domain:
Physical Sciences
Open Access status:
closed
OpenAlex ID:
W4402629774
FWCI:
0.806
Cites:
23
Cited by:
1
Related to:
10