Work

Influence of NH 3 flow rate on the photoelectric properties of high Al content p-AlGaN

Year: 2024

Type: article

Source: Optics Letters

DOI: 10.1364/ol.539867

Authors: Gao Mao Lin, Yang Jing, Xu Yang, Huang Yu Jie, Jia Wei, Dong Hai Liang, Hao Xiao Dong, Xu Bing She, Zhao De Gang

Institutions: Chinese Academy of Sciences, State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan University of Technology, Shaanxi University of Science and Technology, University of Chinese Academy of Sciences

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G2448729015, G6030225121, G6949709843, G8056408038, G818527181, G8753185681

OpenAlex ID: W4402632303

FWCI: 0.433

Cites: 42

Cited by: 3

Related to: 10