Work

Annealing influence on stoichiometry and band alignment of 4H-SiC/SiO2 interface evaluated by x-ray photoelectron spectroscopy

Year: 2024

Type: article

Source: Semiconductor Science and Technology

DOI: 10.1088/1361-6641/ad7b6d

Authors: Ruihong Yuan, Jingqi Wang, Tianyu Chen, Mu He, Yao Ma, Mingmin Huang, Liqiang Liu, Yun Li, Zhimei Yang, Min Gong, Qian Xu, Wende Huang

Institution: Sichuan University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Sichuan Province

Awards: G1620898029, G1661559703, 高压功率器件重离子微损伤在长时间电应力作用下的演化机制及对可靠性影响规律研究

OpenAlex ID: W4402643728

FWCI: 0.205

Cites: 42

Cited by: 2

Related to: 10