Work

Novel Integrated Double pMOS SOI-LIGBT With Low Loss and High Short-Circuit Capability

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3454035

Authors: Jie Wei, Jinlong Lu, Kaiwei Dai, Jialei Tan, Renkuan Liu, Pengchen Zhu, Hui Li, Bo Zhang, Xiaorong Luo

Institutions: University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin Films and Integrated Devices, Chongqing University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G1919938157, G6240582582

OpenAlex ID: W4402661187

FWCI: 0.103

Cites: 13

Cited by: 1

Related to: 10