Enhanced device performance of GaN high electron mobility transistors with in situ crystalline SiN cap layer
Year: 2024
Type: article
Source: Applied Physics Letters
DOI: 10.1063/5.0224144
Authors: Xin Luo, Peng Cui, Handoko Linewih, Tieying Zhang, Xinkun Yan, Siheng Chen, Liu Wang, Jiacheng Dai, Zhaojun Lin, Xiangang Xu, Jisheng Han
Institution: Shandong University
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
Awards: G1217742046, G1713804460
OpenAlex ID: W4402663869