Work

A 0.4 V, 12.2 pW Leakage, 36.5 fJ/Step Switching Efficiency Data Retention Flip-Flop in 22 nm FDSOI

Year: 2024

Type: article

Source: IEEE Transactions on Very Large Scale Integration (VLSI) Systems

DOI: 10.1109/tvlsi.2024.3453946

Authors: Yuxin Ji, Yuhang Zhang, Changyan Chen, Jian Zhao, Fakhrul Zaman Rokhani, Yehea Ismail, Yongfu Li

Institutions: Shanghai Jiao Tong University, Universiti Putra Malaysia, American University in Cairo

Language: English

Topic: Low-power high-performance VLSI design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G3952726810, G8873581579

OpenAlex ID: W4402673198

FWCI: 0.312

Cites: 16

Cited by: 3

Related to: 10