Work

AC-TDDB Behavior in 45 nm PDSOI Ultra-Thin Gate Oxide FETs Using SILC Spectroscopy

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3456780

Authors: Asifa Amin, Sumreti Gupta, Purushothaman Srinivasan, Oscar H. Gonzalez, Abhisek Dixit

Institutions: Indian Institute of Technology Delhi, GlobalFoundries (United States)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4402673372

FWCI: 0.312

Cites: 28

Cited by: 3

Related to: 10