Work

Comprehensive Understanding of the Mobility Scattering Mechanisms and Evaluation of the Universal Mobility in Ultra-Thin-Body Ge-OI p- and n-MOSFETs

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3422951

Authors: Rui Su, Zhuo Chen, Mengnan Ke, Dawei Gao, Walter Schwarzenbach, Bich-Yen Nguyen, Junkang Li, Rui Zhang

Institutions: Zhejiang University, Chiba University, Soitec (France)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G3642759932

OpenAlex ID: W4402673403

FWCI: 0.104

Cites: 39

Cited by: 1

Related to: 10