Test Setup to Study Threshold Voltage Shift of GaN-HEMTs Under Short- and Long-Term Gate and Drain Bias
Year: 2024
Type: article
Institution: Friedrich-Alexander-Universität Erlangen-Nürnberg
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4402673642
