Work

Demonstration of Large MW and Prominent Endurance in a Hf0.5Zr0.5O2 FeFET With IGZO Channel Utilizing Postdeposition Annealing

Year: 2024

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2024.3464589

Authors: Pan Xu, Pengfei Jiang, Yang Yang, Tiancheng Gong, Wei Wei, Yuan Wang, Xiao Long, Jiebin Niu, Zijing Wu, Xueyang Peng, Zhenhua Wu, Qing Luo

Institutions: Chinese Academy of Sciences, Institute of Microelectronics

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Youth Innovation Promotion Association of the Chinese Academy of Sciences

Awards: G2676286910, G2764041933, G6800275950

OpenAlex ID: W4402674155

FWCI: 1.665

Cites: 24

Cited by: 16

Related to: 10