Active Region Mode Control for High-Power, Low-Linewidth Broadened Semiconductor Optical Amplifiers for Light Detection and Ranging
Year: 2024
Type: article
Abstract: This paper introduces a semiconductor optical amplifier (SOA) with high power and narrow linewidth broadening achieved through active region mode control. By integrating mode control with broad-spectrum epitaxial material design, the device achieves high gain, high power, and wide band output. At a wavelength of 1550 nm and an ambient temperature of 20 °C, the output power reaches 757 mW when the input power is 25 mW, and the gain is 21.92 dB when the input power is 4 mW. The 3 dB gain bandwidth is 88 nm, and the linewidth expansion of the input laser after amplification through the SOA is only 1.031 times. The device strikes a balance between high gain and high power, offering a new amplifier option for long-range light detection and ranging (LiDAR).
Source: Sensors
DOI: 10.3390/s24186083
Authors: Hui Tang, Meng Zhang, Lei Liang, Tianyi Zhang, Li Qin, Yue Song, Yuxin Lei, Peng Jia, Yubing Wang, Cheng Qiu, Chuantao Zheng, Xin Li, Yongyi Chen, Dan Li, Yongqiang Ning, Lijun Wang
Institutions: Chinese Academy of Sciences, Changchun Institute of Optics, Fine Mechanics and Physics, Suzhou Institute of Nano-tech and Nano-bionics, State Key Laboratory of Luminescence and Application, Peng Cheng Laboratory, Jilin University, State Key Laboratory on Integrated Optoelectronics, First Automotive Works (China)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,955
OpenAlex ID: W4402681938