Work

Solving the Asymmetric Doping for Wide-Gap Semiconductors by Host Functionalization: Quantum Engineering Strategy

Year: 2024

Type: article

Source: ACS Applied Materials & Interfaces

DOI: 10.1021/acsami.4c08689

Authors: Xiaobao Ma, Zhiming Shi, Hang Zang, Ke Jiang, Yuxin Yang, Feng Zhang, Shunpeng Lv, Shaojuan Li, Xiaojuan Sun, Dabing Li

Institutions: Chinese Academy of Sciences, University of Chinese Academy of Sciences, Changchun Institute of Optics, Fine Mechanics and Physics

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Natural Science Foundation of Jilin Province, National Natural Science Foundation of China, Chinese Academy of Sciences, Youth Innovation Promotion Association of the Chinese Academy of Sciences, National Key Research and Development Program of China

Awards: G1342850133, G1584368417, G1599672187, G2176408726, G3745219491, G4046130396, G5063899986, G6164850540, G680994484, G8987720749

OpenAlex ID: W4402682358

FWCI: 0.289

Cites: 63

Cited by: 2

Related to: 10