Work

Contact potential difference in the absence of current through the sample in the quantum hall effect regime in InGaAs/InAlAs heterostructure

Year: 2024

Type: article

Abstract: The paper presents experimental results of the appearance of voltage at potential contacts in the absence of an external current through the sample in the plateau region of the quantum Hall effect in a heterostructure with an InGaAs/InAlAs quantum well. The occurrence of voltage is associated with the non-equivalence of edge current in potential contact areas in a magnetic field in a system with a two-dimensional electron gas.

Source: Физика металлов и металловедение

DOI: 10.31857/s0015323024020059

Authors: S. V. Gudina, V. N. Neverov, K. V. Turutkin, I. S. Vasil’evskii, A. N. Vinichenko

Institutions: M.N. Mikheev Institute of Metal Physics, National Research Nuclear University MEPhI

Language: English

Topic: Quantum and electron transport phenomena

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W4402714862

FWCI:

Cites: 3

Cited by:

Related to: 10