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Interfacing GaN HEMTs with Josephson Junctions: A Novel Approach to High-Frequency Electronics

Year: 2024

Type: conference-paper

Source: Conference proceedings

DOI: 10.1109/mwscas60917.2024.10658901

Authors: Elijah Racz, Arthur Thomas PE, Maher Rizkalla, Trond Ytterdal, John Lee

Institutions: Purdue University in Indianapolis, Norwegian University of Science and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4402716336

FWCI:

Cites: 22

Cited by:

Related to: 10