Year: 2024
Type: article
Abstract: Reducing the dimensions of materials from three to two, or quasi‐two, provides a fertile platform for exploring emergent quantum phenomena and developing next‐generation electronic devices. However, growing high‐quality, ultrathin, quasi2D materials in a templated fashion on an arbitrary substrate is challenging. Here, the study demonstrates a simple and reproducible on‐chip approach for synthesizing non‐layered, nanometer‐thick, quasi‐2D semimetals. In one implementation, this method starts with thin semiconducting InSe flakes of below 20 nm in thickness with nickel deposited on top, followed by a low‐temperature annealing step that results in a controlled transformation of the layered InSe to a non‐layered, crystalline semimetal via reaction with the laterally diffusing nickel. Atomic resolution microscopy reveals the transformed semimetal to be Ni 3 In 2 Se 2 with a Kagome‐lattice structure. Moreover, it is demonstrated that this synthesis method is generalizable by transforming 2D layered chalcogenides such as SnS and SnSe employing Ni and Co to non‐layered semimetals, paving the way for engineering novel types of devices.
Source: Advanced Materials
Authors: Jun Cai, Huairuo Zhang, Yuanqiu Tan, Zheng Sun, Peng Wu, Rahul Tripathi, Sergiy Krylyuk, Caleb Suhy, Jing Kong, Albert V. Davydov, Zhihong Chen, Joerg Appenzeller
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $5,780
Awards: G1452086972, G5131646569, PURPOSE: THE PURPOSE OF THIS GRANT IS TO DEVELOP IN-SITU ELECTRON MICROSCOPY MEASUREMENTS ON NOVEL LOW-DIMENSIONAL ELECTRONIC MATERIALS, TRANSITION METAL CHALCOGENIDES, FOR ADVANCED MICROELECTRONICS.ACTIVITIES TO BE PERFORMED: THE RESEARCHERS WILL DEVELOP NEW METHODOLOGICAL APPROACH FOR DETECTING AND QUANTIFYING MICROSTRUCTURAL AND ELECTRONIC PHASE TRANSFORMATIONS IN TRANSITION METAL CHALCOGENIDE THIN LAYERS UNDER THERMAL AND ELECTRICAL IN-SITU BIASING IN TRANSMISSION ELECTRON MICROSCOPE (TEM).EXPECTED OUTCOMES: THE RESEARCHERS ARE DESIGNING THE PROTOCOL FOR IN-SITU TEM CHARACTERIZATION OF MATERIALS AND DEVICE PLATFORMS FOR NOVEL ELECTRONIC DEVICES. IT WILL INCLUDE METHODOLOGY FOR TRANSFERRING ULTRA-THIN LAYERS OF TRANSITION METAL CHALCOGENIDES ONTO TEM HOLDERS FOR IN-SITU HEATING AND ELECTRICAL BIASING, ON-CHIP FABRICATION OF ELECTRICAL CONTACTS TO THESE LAYERS DIRECTLY ON THE TEM HOLDER, AND IN-OPERANDO MACROSTRUCTURAL CHARACTERIZATION UNDER HEAT TREATMENT AND APPLIED ELECTRICAL BIAS DURING OPERATION. A SUITE OF CHARACTERIZATION TECHNIQUES WILL ALLOW DETERMINING THE DYNAMICS OF PHASE TRANSFORMATION AND OTHER CRITICAL PROCESSES IN ULTRA-THIN LAYERS AND DEVICE HETEROSTRUCTURES TO ENABLE IMPROVED MATERIAL AND DEVICE DESIGN FOR ADVANCED MICROELECTRONICS.INTENDED BENEFICIARIES: THE IN-SITU MICROSCOPY TECHNIQUES THAT WILL BE DEVELOPED THROUGH THIS GRANT WILL ENABLE A BREAK-THROUGH IN THE FIELD OF MEASUREMENT SCIENCE OF PHASE TRANSFORMATION AND RELATED ELECTRONIC PROCESSES AND WILL HAVE A PRACTICAL CONTRIBUTION TO THE TECHNOLOGY OF 2D MATERIALS FOR ADVANCED MICROELECTRONICS, THUS BENEFITING BOTH ACADEMIC AND INDUSTRIAL R&D COMMUNITIES.SUBRECIPIENT ACTIVITIES: THE RECIPIENT DOES NOT INTEND TO SUBAWARD FUNDS.
OpenAlex ID: W4402725720