Work

WSe 2 /n-GaN and WSe 2 /p-GaN heterojunction band alignment

Year: 2024

Type: article

Source: Semiconductor Science and Technology

DOI: 10.1088/1361-6641/ad7d2c

Authors: Wanting Wei, Guijuan Zhao, Xiacong Liu, Xiurui Lv, Xingliang Wang, Guipeng Liu

Institution: Lanzhou University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Gansu Province, Fundamental Research Funds for the Central Universities

Awards: G1231044680, G2107350657, G2215008501

OpenAlex ID: W4402730879

FWCI: 0.576

Cites: 37

Cited by: 6

Related to: 10