Nucleation promotion for the atomic layer deposition of HfO2 onto carbon nanotubes for device applications
Year: 2024
Type: conference-paper
Abstract: The potential of semiconducting single-walled carbon nanotubes (CNTs) as the next-generation semiconductor information material as a successor to silicon-based technology is promising. However, a significant challenge for CNT based electronics at device level lies in the obtainment of high-quality gate dielectrics such as HfO2 on the dangling bond-free and chemically inert surface of CNTs. To address this issue, this paper studies the atomic layer deposition (ALD) of HfO2 onto the surface of carbon-based materials, and focuses on how to promote the nucleation via two methods, i.e. low-temperature Nanofog method and high-temperature variable parameter method. Both methods are confirmed to be effective in improving the continuity and uniformity of ALD HfO2 films.
Author: Bingxian Li
Institution: Xiangtan University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W4402746833