Work

High-performance β-Ga2O3 Schottky barrier diodes with Mg current blocking layer using spin-on-glass technique

Year: 2024

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0230034

Authors: MuJun Li, MingHao He, XiaoHui Wang, Yang Jiang, KangYao Wen, FangZhou Du, ChenKai Deng, JiaQi He, Yi Zhang, WenYue Yu, Qing Wang, HongYu Yu

Institutions: Southern University of Science and Technology, National University of Singapore, University of Hong Kong

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Natural Science Foundation of Shenzhen City, Shenzhen Government, National Natural Science Foundation of China, Guangdong Science and Technology Department

Awards: G2413553065, G5715235155, G5997241033, G6394763329, G6485946272

OpenAlex ID: W4402749214

FWCI: 0.545

Cites: 27

Cited by: 7

Related to: 10