Work

Determining the oxidation stability of SnSe under atmospheric exposure

Year: 2024
Type: article
Abstract: Understanding surface stability becomes critical as 2D materials like SnSe are developed for piezoelectric and optical applications. SnSe thin films deposited by molecular beam epitaxy showed no structural changes after a two-year exposure to atmosphere, as confirmed by X-ray diffraction and Raman spectroscopy. X-ray photoelectron spectroscopy and reflectivity show a stable 3.5 nm surface oxide layer, indicating a self-arresting oxidative process. Resistivity measurements show an electrical response dominated by SnSe post-exposure. This work shows that SnSe films can be used in ambient conditions with minimal risk of long-term degradation, which is critical for the development of piezoelectric or photovoltaic devices. Graphical Abstract
Language: English
Open Access status: hybrid
Estimated APC paid: $3,290
OpenAlex ID: W4402782776
FWCI: 0.945
Cites: 29
Cited by: 10
Related to: 10