The Role of Interface Band Alignment in Epitaxial SrTiO3/GaAs Heterojunctions
Year: 2024
Type: article
Abstract: High Resolution Image Download MS PowerPoint Slide Correlated oxides are known to have remarkable properties, with a range of electronic, magnetic, optoelectronic, and photonic functionalities. A key ingredient in realizing these properties into practical technology is the effective and scalable integration of oxides with conventional semiconductors. Unlocking the full spectrum of functionality requires atomically abrupt oxide–semiconductor interfaces and intimate knowledge of their potential landscape and charge transport. In this study, we investigated the electrical properties of epitaxial SrTiO 3 /GaAs heterostructures by examining the band alignment and transport behavior at the interface. We employ X-ray photoelectron spectroscopy (XPS) to measure the barriers for electrons and holes across the interface and, through them, explain the transport behavior for junctions with n- and p-type GaAs. We further show qualitative evidence of the strong photoresponse of these structures, illustrating the potential of these structures in optoelectronic devices. These results establish the fundamental groundwork for utilizing these interfaces toward new devices and define their design space.
Source: ACS Applied Electronic Materials
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $4,500
Funders: U.S. Department of Energy, Center for Integrated Nanotechnologies, Novo Nordisk, Danmarks Frie Forskningsfond, Danmarks Tekniske Universitet, Technion-Israel Institute of Technology, Russell Berrie Nanotechnology Institute, Technion-Israel Institute of Technology, PAZY Foundation, Novo Nordisk Fonden, Office of Science, National Nuclear Security Administration, European Research Council, Los Alamos National Laboratory
OpenAlex ID: W4402789153