Work

MOS-structured MoS2/GaN Schottky barrier diodes with high on/off current ratio and low threshold voltage

Year: 2024

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0231505

Authors: Runjie Zhou, Wenliang Wang, Guoqiang Li

Institutions: State Key Laboratory of Luminescent Materials and Devices, South China University of Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G4934913847, G6365660946, G6952461238

OpenAlex ID: W4402818969

FWCI: 1.338

Cites: 35

Cited by: 9

Related to: 10