Work

Methodology to Optimize E-Mode GaN HEMT with P-Type Doping under 2DEG Layer

Year: 2024

Type: conference-paper

Source: IEEE International Conference on Semiconductor Electronics

DOI: 10.1109/icse62991.2024.10681355

Authors: M.N.A. Muhammad Ridzwan, M.F. Abdullah, A.M. Mohamad Yussof, N. Abd Aziz, H.W. Lee

Institutions: National University of Malaysia, MIMOS (Malaysia)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4402835846

FWCI: 2.381

Cites: 10

Cited by: 2

Related to: 10