Work

Threshold Voltage Instability of GaN HEMTs with Thin Barrier AlGaN Technology

Year: 2024

Type: conference-paper

Source: IEEE International Conference on Semiconductor Electronics

DOI: 10.1109/icse62991.2024.10681367

Authors: Tsung-Ying Yang, Jui-Sheng Wu, You-Chen Weng, Chih-Yi Yang, Edward-Yi Chang

Institution: National Yang Ming Chiao Tung University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4402836030

FWCI:

Cites: 6

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Related to: 10