Work

Low Noise with High Linearity AlGaN/GaN HEMT Using Γ-Shaped Gate for Ka-Band Applications

Year: 2024
Type: conference-paper
Authors: Howie Tseng, Neng-Da Li, Yueh-Chin Lin, Mu-Yu Chen, Edward Yi Chang
Language: English
Open Access status: closed
OpenAlex ID: W4402836051
FWCI: 1.159
Cites: 10
Cited by: 1
Related to: 10