Work

The Effects of Al2O3 Interlayer on the Ferroelectric Behavior of Hf0.5Zr0.5O2 Thin Film for E-mode Ferroelectric Charge Trap Gate GaN HEMT

Year: 2024

Type: conference-paper

Source: IEEE International Conference on Semiconductor Electronics

DOI: 10.1109/icse62991.2024.10681347

Authors: Jui-Sheng Wu, Tsung-Ying Yang, You-Chen Weng, Chih-Yi Yang, Yu-Tung Du, Yi-Hsiang Wei, Edward-Yi Chang

Institution: National Yang Ming Chiao Tung University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4402836061

FWCI: 1.56

Cites: 6

Cited by: 2

Related to: 10