Work

1kV Vertical Breakdown Voltage AlGaN/GaN HEMTs on Si with AlN and AlGaN/AlN Superlattice Buffer Engineering

Year: 2024

Type: conference-paper

Source: IEEE International Conference on Semiconductor Electronics

DOI: 10.1109/icse62991.2024.10681378

Authors: You-Chen Weng, Chin-Yi Yang, Tsung-Ying Yang, Chin-Han Chung, Tsung-Han Chiang, Fu-Chin Tung, Shih-Hsiang Lai, Hung-Wei Yu, Edward Yi Chang

Institutions: National Yang Ming Chiao Tung University, Industrial Technology Research Institute

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4402836075

FWCI: 3.478

Cites: 7

Cited by: 3

Related to: 10