Year: 2024
Type: article
Abstract: This article presents the gettering mechanism and the physical model of impurity Ni atom clusters in the Si crystal lattice. The study finds out that the formed Ni atom clusters lead to gettering various rapidly diffusing impurities, both present in the Si lattice and introduced, as well as oxygen atoms, by stimulating generation of recombination centers of thermal and radiation defects.
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W4402837053