Work

Perspective on the spin field-effect transistor

Year: 2024

Type: article

Abstract: The spin field effect transistor (sFET), proposed by Datta and Das (1990 Appl. Phys. Lett. 56 665–7), has long been regarded as a model semiconductor spintronic device, offering potential for new, more energy-efficient functionalities in electronic devices. Here, the overview is given how the pursuit of meeting the requirements for implementing the sFET concept has influenced spintronic research, leading to a greater understanding of spin phenomena in solids and resulting in numerous exciting effects. After looking back, based on the recent developments, the possible future directions of the sFET-related research are described.

Source: Journal of Physics D Applied Physics

DOI: 10.1088/1361-6463/ad8003

Author: Mariusz Ciorga

Institutions: Wrocław University of Science and Technology, University of Regensburg

Language: English

Topic: Quantum and electron transport phenomena

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $3,165

Funder: Deutsche Forschungsgemeinschaft