Work

Fabrication and formation mechanisms of Ohmic conducts with low annealing temperature for GaN/AlN superlattice barrier HEMTs

Year: 2024

Type: article

Source: Journal of Physics D Applied Physics

DOI: 10.1088/1361-6463/ad7ffa

Authors: Shanjie Li, Fanyi Zeng, Nengtao Wu, Ling Luo, Ben Cao, Changtong Wu, Wenliang Wang, Guoqiang Li

Institutions: South China University of Technology, State Key Laboratory of Luminescent Materials and Devices

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G6952461238

OpenAlex ID: W4402883854

FWCI:

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